- Семеріков, С.О., Соловйов, В.М. and Максимова, Т.І. (1998) On the physical nature of metastable properties of amorphous semiconductors Збірник наукових праць Східноукраїнського державного університету. Серія «Машинобудування», 1.
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Abstract
Carried out ab initio calculations of a new type of defect in materials with covalent bonds - orientation defect (OD). OD is a typical defective condition in the tetrahedral amorphous semiconductor in the vicinity of which there is no radical restructuring of chemical bonds: the last test only angular and radial deformation. The existence of orientation defects allows to review traditional ideas about the properties of metastable amorphous substances and consistently interpret a wide range of features of their behavior under conditions of thermodynamic equilibrium, and in a state far from equilibrium (for example, the effect Staebler-Wronski). In addition, money laundering can be seen as a model of anharmonic interatomic potentials, causing low-temperature anomalies of the physical properties of disordered materials. Some of them for the first time considered from a new angle.
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